Charge collection measurements with p-type Magnetic Czochralski Silicon single pad detectors
نویسندگان
چکیده
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 cm the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
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تاریخ انتشار 2007